Article# | Article Title & Authors | Page |
309 |
S. P. Syed Ibrahim, K. R. Chandran, and C. J. Kabila Kanthasamy
|
1 |
310 |
S. K. Mahendran and S. Santhosh Baboo
|
7 |
311 |
Bobby Barua
|
11 |
312 |
V. T. Bhanu Kiran, M. Krishna, J. R. Natraj, and Satish Kumar
|
18 |
313 |
N.H. Abdul Hamid and M.A. Masrom
|
26 |
314 |
A. Anitha
|
34 |
315 |
A. Sarfaraz and K. Jenab
|
38 |
316 |
Hussam Elbehiery
|
46 |
317 |
Kishan Choudhuri and Prasun Chakraborti
|
52 |
318 |
Bangyong Sun and Shisheng Zhou
|
57 |
319 |
Md M. Biswas, Umama Zobayer, Md J. Hossain, Md Ashiquzzaman, and Md Saleh
|
61 |
320 |
Analysis of Gate Leakage Current in IP3 SRAM Bit-Cell under Temperature Variations in DSM Technology
Neeraj Kr. Shukla, R. K. Singh, and Manisha Pattanaik
|
67 |
321 |
Chandan Kumar Das and Harekrushna Sutar
|
72 |
322 |
A.G. Kay Dora and N.H. Abdul Hamid
|
76 |
323 |
Ich Siriprasert and Pongtana Vanichkobchinda
|
82 |
324 |
K. Sivakumar, N. Krishna Mohan, and B. Sivaraman
|
86 |
325 |
Sayed Abbas Tabatabaee and Bahram Johari
|
93 |
326 |
Mohammad Hesam Hafezi, Amiruddin Ismail, Ramez A. Al-Mansob, and Omran Kohzadi Seifabad
|
97 |
327 |
Md. Abu Taleb and Shamsuzzaman Majumder
|
103 |
328 |
G. Kirankumar, J. Samsuresh, and G. Balaji
|
107 |
Copyright © 2008-2024. International Journal of Engineering and Technology. All rights reserved.
E-mail: ijet_Editor@126.com