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General Information
    • ISSN: 1793-8236 (Online)
    • Abbreviated Title Int. J. Eng. Technol.
    • Frequency:  Quarterly 
    • DOI: 10.7763/IJET
    • APC: 500 USD
    • Managing Editor: Ms. Shira. Lu 
    • Abstracting/ Indexing: Inspec (IET), CNKI Google Scholar, EBSCO, ProQuest, Crossref, Ulrich Periodicals Directory, Chemical Abstracts Services (CAS), etc.
    • E-mail: ijet_Editor@126.com
IJET 2012 Vol.4(5): 518-521 ISSN: 1793-8236
DOI:10.7763/IJET.2012.V4.423

Chromatic Dispersion in Traditional Fiber and Silicon Nanocrystal and Er Doped Fiber Optical Amplifier

S. H. Hashemipour

Abstract—In this paper, the chromatic dispersion at the traditional fiber and optical amplifier has been studied that is one of the important optical parameters is investigated by using of step index profile (traditional profile) and Silicon Nanocrystal and Er doped fiber (homogenous distribution profile) optical amplifier. At the traditional step index fiber, by changing of the reflective index and radius of core, zero dispersion is altered at the situation of 1.55µm that indicates the optical communication low loss occurrence at this wavelength. At least, the position of the zero chromatic dispersion is changed when Silicon Nanocrystal and Er are doped at the core of fiber for optical amplification goals. Therefore, these lead to have disturbance on the optical signal in the fiber, we have shown that with varying of those parameters of profile index fiber and amount of Silicon Nanocrystal, the dispersion coefficient is changed and the zero dispersion in 1.55µm situation would be attainable

Index Terms—Erbium doped fiber amplifier (EDFA), Si-Nc (silicon nanocrystal), semiconductor optical amplifiers (SOA) and wavelength (Landa)

S. H. Hashemipour is with the Department Electrical and Computer, Roudsar and Amlash Branch Islamic Azad University, Roudsar, Iran (e-mail: C_e_hamid@yahoo.com).

[PDF]

Cite: S. H. Hashemipour, "Chromatic Dispersion in Traditional Fiber and Silicon Nanocrystal and Er Doped Fiber Optical Amplifier," International Journal of Engineering and Technology vol. 4, no. 5, pp. 518-521, 2012.

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